TPC8115(TE12L,Q,M) | Toshiba Electronic Devices and Storage Corporation TPC8115(TE12L,Q,M) | TPC8115(TE12L,Q,M) Inventory, Best Pricing

TPC8115(TE12L,Q,M)

Enlarge

For Reference Only

Part Number	TPC8115(TE12L,Q,M)
LIXINC Part #	TPC8115(TE12L,Q,M)
Manufacturer	Toshiba Electronic Devices and Storage Corporation
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET P-CH 20V 10A 8SOP
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	TPC8115(TE12L,Q,M) PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Sep 21 - Sep 25 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

TPC8115(TE12L,Q,M) Specifications

Part Number:	TPC8115(TE12L,Q,M)
Brand:	Toshiba Electronic Devices and Storage Corporation
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Toshiba Electronic Devices and Storage Corporation
Series:	U-MOSIV
Package:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Rds On (Max) @ Id, Vgs:	10mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id:	1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:	115 nC @ 5 V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	9130 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	1W (Ta)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-SOP (5.5x6.0)
Package / Case:	8-SOIC (0.173", 4.40mm Width)