TK14G65W,RQ | Toshiba Electronic Devices and Storage Corporation TK14G65W,RQ

TK14G65W,RQ

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Part Number	TK14G65W,RQ
LIXINC Part #	TK14G65W,RQ
Manufacturer	Toshiba Electronic Devices and Storage Corporation
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 650V 13.7A D2PAK
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	TK14G65W,RQ PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Sep 29 - Oct 03 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

TK14G65W,RQ Specifications

Part Number:	TK14G65W,RQ
Brand:	Toshiba Electronic Devices and Storage Corporation
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Toshiba Electronic Devices and Storage Corporation
Series:	DTMOSIV
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	13.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	250mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 690µA
Gate Charge (Qg) (Max) @ Vgs:	35 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	1300 pF @ 300 V
FET Feature:	-
Power Dissipation (Max):	130W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D2PAK
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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