2SA1955FVBTPL3Z

2SA1955FVBTPL3Z
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Part Number 2SA1955FVBTPL3Z
LIXINC Part # 2SA1955FVBTPL3Z
Manufacturer Toshiba Electronic Devices and Storage Corporation
Category Discrete SemiconductorTransistors - Bipolar (BJT) - Single
Description TRANS PNP 12V 0.4A VESM
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models 2SA1955FVBTPL3Z PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Sep 22 - Sep 26 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

2SA1955FVBTPL3Z Specifications

Part Number:2SA1955FVBTPL3Z
Brand:Toshiba Electronic Devices and Storage Corporation
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - Bipolar (BJT) - Single
Manufacturer:Toshiba Electronic Devices and Storage Corporation
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
Transistor Type:PNP
Current - Collector (Ic) (Max):400 mA
Voltage - Collector Emitter Breakdown (Max):12 V
Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 200mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:300 @ 10mA, 2V
Power - Max:100 mW
Frequency - Transition:130MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-723
Supplier Device Package:VESM

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In Stock 11727 - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$0.12000$0.12
8000$0.06757$540.56

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