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IPB45N06S4L08ATMA1

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Part Number	IPB45N06S4L08ATMA1
LIXINC Part #	IPB45N06S4L08ATMA1
Manufacturer	Rochester Electronics
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 60V 45A TO263-3
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	IPB45N06S4L08ATMA1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Sep 22 - Sep 26 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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IPB45N06S4L08ATMA1 Specifications

Part Number:	IPB45N06S4L08ATMA1
Brand:	Rochester Electronics
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Rochester Electronics
Series:	OptiMOS™
Package:	Bulk
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	7.9mOhm @ 45A, 10V
Vgs(th) (Max) @ Id:	2.2V @ 35µA
Gate Charge (Qg) (Max) @ Vgs:	64 nC @ 10 V
Vgs (Max):	±16V
Input Capacitance (Ciss) (Max) @ Vds:	4.78 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	71W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TO263-3-2
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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