For Reference Only
Part Number | TPH8R80ANH,L1Q |
LIXINC Part # | TPH8R80ANH,L1Q |
Manufacturer | Toshiba Electronic Devices and Storage Corporation |
Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
Description | MOSFET N CH 100V 32A 8-SOP |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | TPH8R80ANH,L1Q PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Sep 26 - Sep 30 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
Part Number: | TPH8R80ANH,L1Q |
Brand: | Toshiba Electronic Devices and Storage Corporation |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Transistors - FETs, MOSFETs - Single |
Manufacturer: | Toshiba Electronic Devices and Storage Corporation |
Series: | U-MOSVIII-H |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 32A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 8.8mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs: | 33 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2800 pF @ 50 V |
FET Feature: | - |
Power Dissipation (Max): | 1.6W (Ta), 61W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SOP Advance (5x5) |
Package / Case: | 8-PowerVDFN |
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In Stock | 11686 - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
Qty. | Unit Price | Ext. Price |
---|---|---|
1 | $1.69000 | $1.69 |
5000 | $0.75480 | $3774 |
Lixinc will offer the most competitive prices for you, please refer to the quotations.
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