RQ3E100BNTB | ROHM Semiconductor RQ3E100BNTB | RQ3E100BNTB Inventory, Best Pricing

RQ3E100BNTB

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Part Number	RQ3E100BNTB
LIXINC Part #	RQ3E100BNTB
Manufacturer	ROHM Semiconductor
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 30V 10A 8HSMT
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	RQ3E100BNTB PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jul 08 - Jul 12 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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RQ3E100BNTB Specifications

Part Number:	RQ3E100BNTB
Brand:	ROHM Semiconductor
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	ROHM Semiconductor
Series:	-
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	10.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	22 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1100 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	2W (Ta)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-HSMT (3.2x3)
Package / Case:	8-PowerVDFN

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