SQM50N04-4M0L_GE3

SQM50N04-4M0L_GE3
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Part Number SQM50N04-4M0L_GE3
LIXINC Part # SQM50N04-4M0L_GE3
Manufacturer Vishay / Siliconix
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET N-CHANNEL 40V 50A TO263
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SQM50N04-4M0L_GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Oct 08 - Oct 12 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

SQM50N04-4M0L_GE3 Specifications

Part Number:SQM50N04-4M0L_GE3
Brand:Vishay / Siliconix
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Vishay / Siliconix
Series:Automotive, AEC-Q101, TrenchFET®
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:130 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6100 pF @ 25 V
FET Feature:-
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263 (D²Pak)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Quick Inquiry

In Stock 10856 - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$1.33980$1.3398
800$1.28296$1026.368

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