TK100E06N1,S1X | Toshiba Electronic Devices and Storage Corporation TK100E06N1,S1X

TK100E06N1,S1X

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Part Number	TK100E06N1,S1X
LIXINC Part #	TK100E06N1,S1X
Manufacturer	Toshiba Electronic Devices and Storage Corporation
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N CH 60V 100A TO-220
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	TK100E06N1,S1X PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jul 03 - Jul 07 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

TK100E06N1,S1X Specifications

Part Number:	TK100E06N1,S1X
Brand:	Toshiba Electronic Devices and Storage Corporation
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Toshiba Electronic Devices and Storage Corporation
Series:	U-MOSVIII-H
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	100A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	2.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	140 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	10500 pF @ 30 V
FET Feature:	-
Power Dissipation (Max):	255W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220
Package / Case:	TO-220-3

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