IAUC100N08S5N043ATMA1

IAUC100N08S5N043ATMA1
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Part Number IAUC100N08S5N043ATMA1
LIXINC Part # IAUC100N08S5N043ATMA1
Manufacturer IR (Infineon Technologies)
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET N-CH 80V 100A 8TDSON-34
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IAUC100N08S5N043ATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Oct 08 - Oct 12 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IAUC100N08S5N043ATMA1 Specifications

Part Number:IAUC100N08S5N043ATMA1
Brand:IR (Infineon Technologies)
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:IR (Infineon Technologies)
Series:Automotive, AEC-Q101, OptiMOS™-5
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:3.8V @ 63µA
Gate Charge (Qg) (Max) @ Vgs:56 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3860 pF @ 40 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-34
Package / Case:8-PowerTDFN

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In Stock 14965 - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$2.26000$2.26

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