FQU13N06LTU-WS | Sanyo Semiconductor/ON Semiconductor FQU13N06LTU-WS

FQU13N06LTU-WS

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Part Number	FQU13N06LTU-WS
LIXINC Part #	FQU13N06LTU-WS
Manufacturer	Sanyo Semiconductor/ON Semiconductor
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 60V 11A IPAK
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	FQU13N06LTU-WS PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Oct 07 - Oct 11 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

FQU13N06LTU-WS Specifications

Part Number:	FQU13N06LTU-WS
Brand:	Sanyo Semiconductor/ON Semiconductor
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Sanyo Semiconductor/ON Semiconductor
Series:	QFET®
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Rds On (Max) @ Id, Vgs:	115mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	6.4 nC @ 5 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	350 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	2.5W (Ta), 28W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	I-PAK
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA

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