For Reference Only
Part Number | 2SA965-Y,T6F(J |
LIXINC Part # | 2SA965-Y,T6F(J |
Manufacturer | Toshiba Electronic Devices and Storage Corporation |
Category | Discrete Semiconductor › Transistors - Bipolar (BJT) - Single |
Description | TRANS PNP 800MA 120V TO226-3 |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | 2SA965-Y,T6F(J PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Oct 11 - Oct 15 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
Part Number: | 2SA965-Y,T6F(J |
Brand: | Toshiba Electronic Devices and Storage Corporation |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Transistors - Bipolar (BJT) - Single |
Manufacturer: | Toshiba Electronic Devices and Storage Corporation |
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 800 mA |
Voltage - Collector Emitter Breakdown (Max): | 120 V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 100mA, 5V |
Power - Max: | 900 mW |
Frequency - Transition: | 120MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | LSTM |
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In Stock | 10861 - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
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Qty. | Unit Price | Ext. Price |
---|---|---|
1 | $0.0000 | $0 |
100 | $0.0000 | $0 |
500 | $0.0000 | $0 |
1000 | $0.0000 | $0 |
2500 | $0.0000 | $0 |
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