2SA965-Y,T6F(J

2SA965-Y,T6F(J
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Part Number 2SA965-Y,T6F(J
LIXINC Part # 2SA965-Y,T6F(J
Manufacturer Toshiba Electronic Devices and Storage Corporation
Category Discrete SemiconductorTransistors - Bipolar (BJT) - Single
Description TRANS PNP 800MA 120V TO226-3
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models 2SA965-Y,T6F(J PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Oct 11 - Oct 15 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

2SA965-Y,T6F(J Specifications

Part Number:2SA965-Y,T6F(J
Brand:Toshiba Electronic Devices and Storage Corporation
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - Bipolar (BJT) - Single
Manufacturer:Toshiba Electronic Devices and Storage Corporation
Series:-
Package:Bulk
Part Status:Obsolete
Transistor Type:PNP
Current - Collector (Ic) (Max):800 mA
Voltage - Collector Emitter Breakdown (Max):120 V
Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 100mA, 5V
Power - Max:900 mW
Frequency - Transition:120MHz
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 Long Body
Supplier Device Package:LSTM

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