NJVMJD3055T4G

NJVMJD3055T4G
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Part Number NJVMJD3055T4G
LIXINC Part # NJVMJD3055T4G
Manufacturer Sanyo Semiconductor/ON Semiconductor
Category Discrete SemiconductorTransistors - Bipolar (BJT) - Single
Description TRANS NPN 60V 10A DPAK-4
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models NJVMJD3055T4G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Oct 27 - Oct 31 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

NJVMJD3055T4G Specifications

Part Number:NJVMJD3055T4G
Brand:Sanyo Semiconductor/ON Semiconductor
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - Bipolar (BJT) - Single
Manufacturer:Sanyo Semiconductor/ON Semiconductor
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:NPN
Current - Collector (Ic) (Max):10 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:8V @ 3.3A, 10A
Current - Collector Cutoff (Max):50µA
DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 4A, 4V
Power - Max:1.75 W
Frequency - Transition:2MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK

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Quick Inquiry

In Stock 10955 - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$1.08000$1.08
2500$0.42954$1073.85
5000$0.40908$2045.4

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