RN1107MFV,L3F(CT | Toshiba Electronic Devices and Storage Corporation RN1107MFV,L3F(CT

RN1107MFV,L3F(CT

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Part Number	RN1107MFV,L3F(CT
LIXINC Part #	RN1107MFV,L3F(CT
Manufacturer	Toshiba Electronic Devices and Storage Corporation
Category	Discrete Semiconductor › Transistors - Bipolar (BJT) - Single, Pre-Biased
Description	TRANS PREBIAS NPN 50V 0.1A VESM
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	RN1107MFV,L3F(CT PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Sep 22 - Sep 26 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

RN1107MFV,L3F(CT Specifications

Part Number:	RN1107MFV,L3F(CT
Brand:	Toshiba Electronic Devices and Storage Corporation
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer:	Toshiba Electronic Devices and Storage Corporation
Series:	-
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100 mA
Voltage - Collector Emitter Breakdown (Max):	50 V
Resistor - Base (R1):	10 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 500µA, 5mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	-
Power - Max:	150 mW
Mounting Type:	Surface Mount
Package / Case:	SOT-723
Supplier Device Package:	VESM

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Qty.	Unit Price	Ext. Price
1	$0.18000	$0.18

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