For Reference Only
Part Number | RN2111MFV,L3F |
LIXINC Part # | RN2111MFV,L3F |
Manufacturer | Toshiba Electronic Devices and Storage Corporation |
Category | Discrete Semiconductor › Transistors - Bipolar (BJT) - Single, Pre-Biased |
Description | TRANS PREBIAS PNP 50V 0.1A VESM |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | RN2111MFV,L3F PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Jul 05 - Jul 09 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | ![]() |
Shipping | ![]() |
Part Number: | RN2111MFV,L3F |
Brand: | Toshiba Electronic Devices and Storage Corporation |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Manufacturer: | Toshiba Electronic Devices and Storage Corporation |
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100 mA |
Voltage - Collector Emitter Breakdown (Max): | 50 V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | - |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Frequency - Transition: | - |
Power - Max: | 150 mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-723 |
Supplier Device Package: | VESM |
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In Stock | 10878 - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
Qty. | Unit Price | Ext. Price |
---|---|---|
1 | $0.03180 | $0.0318 |
8000 | $0.03180 | $254.4 |
Lixinc will offer the most competitive prices for you, please refer to the quotations.
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