HN1C03FU-B,LF

HN1C03FU-B,LF
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Part Number HN1C03FU-B,LF
LIXINC Part # HN1C03FU-B,LF
Manufacturer Toshiba Electronic Devices and Storage Corporation
Category Discrete SemiconductorTransistors - Bipolar (BJT) - Arrays
Description NPN + NPN IND. TRANSISTOR VCEO20
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models HN1C03FU-B,LF PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Sep 26 - Sep 30 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

HN1C03FU-B,LF Specifications

Part Number:HN1C03FU-B,LF
Brand:Toshiba Electronic Devices and Storage Corporation
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - Bipolar (BJT) - Arrays
Manufacturer:Toshiba Electronic Devices and Storage Corporation
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:2 NPN (Dual)
Current - Collector (Ic) (Max):300mA
Voltage - Collector Emitter Breakdown (Max):20V
Vce Saturation (Max) @ Ib, Ic:100mV @ 3mA, 30A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:350 @ 4mA, 2V
Power - Max:200mW
Frequency - Transition:30MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:US6

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In Stock 13778 - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$0.39000$0.39

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